Customization: | Available |
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Type: | Piezoresistive Pressure Sensor |
Component: | SemiConductor Type |
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BP350 Monocrystalline Silicon Differential Pressure Sensor
Performance Parameters | |
Output | 60~140mV |
Storage temperature | -40ºC~125ºC |
Work Temperature | -40ºC~85ºC |
Power Supply | 5V DC |
Temperature Hysteresis | ±0.1%FS(10kPa) |
Pressure Hysteresis | ±0.025%FS |
Long-Term Stability | ±0.05%FS/year |
Non-linearity | ±0.5%FS(10kPa |
Static Pressure Influence | ±0.15%FS/10MPa |
Diaphragm Material | 316L or Hastelloy |
Zero Temperature Drift | ±0.05%FS/ºC |
Pressure Range | ||
Range | Over pressure | Static pressure |
-6kPa~0~6kPa | 16MPa | 16MPa |
-40kPa~0~40kPa | 16MPa | 16MPa |
-100kPa~0~100kPa | 16MPa | 25MPa |
-250kPa~0~250kPa | 16MPa | 25Mpa |
-1MPa~0~1MPa | 16MPa | 40Mpa |
-3MPa~0~3MPa | 16MPa | 40Mpa |
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